· MBE is low temperature process which is advantageous for VLSI
· While preparing thin layers using MBE process, auto.cloping and autodiffusion both are minimized.
· The MBE process can be used for generating complicated doping profiles as it regulates the amount of dopant.
· As MBE process is based on the evaporation of silicon and the dopants, hence no chemical reactions are involved in it.
· For MBE process safety precautions are not required extensively as compared to those required in CVD process.
Disadvantages of MBE Process
· For overall perfect and pure film, it is necessary to maintain a very low pressure of the order of 10-10 Tor, which is slightly difficult.
· This process is very expensive as compared to CVD process.
· The growth rate in MBE process is 0.01 – 0.3 gm/min which is very small compared to the growth rate of 1 µm/min in CVD process.
